Applying Gallium Oxide Interlayer to Approach the Quantum Limit of Specific Contact Resistivity of Ti/N+-Gan Ohmic Contact

Author:

Xie Shujie,He Jiaheng,Wu Xuankun,Cheng Zhe,Zhang Lian,Mi Changxin,Xie Qiao,Zhang Yun

Publisher

Elsevier BV

Reference45 articles.

1. Communications, A review of GaN HEMT broadband power amplifiers;K H Hamza;AEU-International Journal of Electronics Communications,2020

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3. A Review of GaN RF Devices and Power Amplifiers for 5G Communication Applications;H Lu;Fundam. Res,2023

4. Piezoelectric pressure sensor based on flexible gallium nitride thin film for harshenvironment and high-temperature applications;N.-I Kim;Sens. Actuators A,2020

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