Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure

Author:

Kaneriya R.K.ORCID,Karmakar Chiranjit,Sahu Manish KumarORCID,Basu P.K.,Upadhyay R.B.

Publisher

Elsevier BV

Subject

General Engineering

Reference39 articles.

1. GaN FinFET and trigate devices for power and RF applications: review and perspective;Zang;Semicond. Sci. Technol.,2021

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3. III nitride and UV detection;Munoz;J. Phys. Condens. Matter,2001

4. Optical properties and carrier dynamics of two-dimensional electrons in AlGaN∕GaN single heterostructures Appl;Kwack;Phys. Lett.,2005

5. Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1−xN/GaN heterostructures;Zheng;Phys. Rev. B,2000

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