Breakdown voltage analysis of Al 0.25 Ga 0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference29 articles.
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2. Simulation study of high voltage GaN MISFETs with embedded PN junction*;Chinese Physics B;2020-07-01
3. The Analysis Model of AlGaN/GaN HEMTs with Electric Field Modulation Effect;IETE Technical Review;2019-10-14
4. Analytical Models for the electric field and potential of AlGaN/GaN HEMT with partial silicon doping;Superlattices and Microstructures;2019-04
5. Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT;Journal of Semiconductors;2016-06
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