100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/3/038501/pdf
Reference30 articles.
1. Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs
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3. Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
4. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
5. 100-Gb/s Multiplexing and Demultiplexing IC Operations in InP HEMT Technology
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