0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1−ybuffers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=2/a=026802/pdf
Reference17 articles.
1. High-performance In/sub 0.53/Ga/sub 0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy
2. GaxIn1−xAs thermophotovoltaic converters
3. 0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
4. Self-consistent determination of the band offsets inInAsxP1−x/InPstrained-layer quantum wells and the bowing parameter of bulkInAsxP1−x
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1. All-top-contact 0.59 eV InGaAs thermophotovoltaic cells and modules;Semiconductor Science and Technology;2023-08-25
2. Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy;Crystals;2021-12-20
3. Simulation of 0.67 eV-InGaAs solar cell with InP window-layers of various thickness on virtual InP/AlGaInAs/GaAs substrates;Engineering Research Express;2021-10-13
4. A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations;Materials;2021-08-30
5. Step-graded InAsP buffer layers with gradient interface grown via metal organic chemical vapor deposition;SN Applied Sciences;2019-05-17
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