Self-consistent determination of the band offsets inInAsxP1−x/InPstrained-layer quantum wells and the bowing parameter of bulkInAsxP1−x
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.1990/fulltext
Reference28 articles.
1. Temperature dependent photoluminescent properties of InAsxP1−x/InP strained‐layer quantum wells
2. Novel material properties of strained‐layer superlattices
3. Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs
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