1. W. Shockley, U. S. Patent No. 2,569,347 (1951).
2. A. I. Gubanov, “Theory of the junction of two semiconductors having one type of conductivity,” ZhTF, 21, No. 3, 304–315 (1951); “Toward a theory of junction phenomena in semiconductors,” ZhTF, 22, No. 5, 729-735 (1952).
3. R. L. Anderson, “Experiments on Ge-GaAs heterojunctions,” Solid State Electron., 5, 341–351 (1962).
4. Zh. I. Alferov, “Heterojunctions in semiconductor electronics in the near future,” in: Physics Today and Tomorrow. Ser. Modern Trends in Scientific Development, [in Russian], Nauka, Leningrad (1973) pp. 61–89.
5. Proc. Intern. Conf. on Semiconductor Heterojunctions. Budapest, October, 1970, Vol. II. Academia Kiado, Budapest (1971).