InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy
2. Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications
3. GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE
4. Effect of substrate misorientation on tear-drop-like hillock defect densities in InP and GaInAsP grown by metalorganic chemical vapor deposition
5. Surface topography and step orientation during metalorganic vapor phase epitaxy of InP
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1. Growths and diffusions for InGaAs/InP single-photon avalanche diodes;Sensors and Actuators A: Physical;2013-10
2. Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy;Physical Review B;2012-10-08
3. Lattice-Matched and Strain-Compensated Materials for Mid-Wave and Long-Wave Infrared Quantum Cascade Lasers;ECS Transactions;2011-10-04
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