Effect of substrate misorientation on tear-drop-like hillock defect densities in InP and GaInAsP grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Critical misorientation morphology in AlGaAs and GaAs grown by atmospheric-pressure MOCVD on misoriented substrates
2. Surface Dislocation Theory of Reconstructed Crystals: VPE GaAs
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1. InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers;Journal of Crystal Growth;2011-01
2. Role of surface diffusion during selective area MOVPE growth of InP;Thin Solid Films;2006-03
3. Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers;Journal of Crystal Growth;2003-09
4. Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures;Thin Solid Films;2003-08
5. Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures;Journal of Crystal Growth;2003-06
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