Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
2. Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures
3. MOVCD growth of selectively doped AlInAs/GaInAs heterostructures
4. OMVPE growth of AlInAs and device quality AlInAs-based heterostructures
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1. Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates;Applied Physics Letters;2022-02-14
2. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
3. Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates;Journal of Vacuum Science & Technology B;2019-05
4. Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures;Results in Physics;2019-03
5. Linear optical properties of Al1-xInxAs and In1-xGaxAs for photovoltaic applications: A first-principles investigation with the (TB-mBJ) approach;Optik;2017-10
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