OMVPE growth of AlInAs and device quality AlInAs-based heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Electrical properties of undoped and Si‐doped Al0.48In0.52As grown by liquid phase epitaxy
2. The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy
3. Proc. 13th Intern. Symp. on GaAs and Related Compounds;Kamada,1987
4. Tech. Digest;Fathimulla,1987
5. Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP
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1. Early stages of InP nanostructure formation on AlInAs;Physical Review B;2020-04-27
2. Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates;Journal of Vacuum Science & Technology B;2019-05
3. Observation of optical bleaching at 1.06μm in AlInAs/AlGaInAs multiple quantum wells;Journal of Crystal Growth;2010-04
4. Material and electrical characteristics of iron doped Pt-lnAIAs schottky diodes grown by LP-MOCVD;Journal of Electronic Materials;1996-05
5. Origin of the 1.3 eV Transition in InP/InAlAs/InP Heterostructure;MRS Proceedings;1995
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