Early stages of InP nanostructure formation on AlInAs-Reference-Cited by-同舟云学术

Early stages of InP nanostructure formation on AlInAs

Published:2020-04-27 Issue:16 Volume:101 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Gocalinska Agnieszka M.^ORCID,Mura Enrica E.,Manganaro Marina^ORCID,Juska Gediminas^ORCID,Dimastrodonato Valeria,Thomas Kevin,Zangwill Andrew,Vvedensky Dimitri D.^ORCID,Pelucchi Emanuele^ORCID

Funder

Science Foundation Ireland

FP7 Information and Communication Technologies

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.165310/fulltext

Reference60 articles.

1. An introduction to InP-based generic integration technology

2. System-on-Chip Photonic Integrated Circuits

3. High-Index-Contrast λ = 1.55 μm AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation

4. P‐substrate InP‐based 1.5 μm lasers using an internal carbon‐doped layer to block p‐dopant diffusion

5. Investigations of MOCVD-grown AlInAs-InP type II heterostructures

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