Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates-Reference-Cited by-同舟云学术

Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates

Published:2019-05 Issue:3 Volume:37 Page:031208
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Diallo Thierno Mamoudou¹²,Poungoué Mbeunmi Alex Brice¹²,El-Gahouchi Mohamed¹²,Jellite Mourad¹³,Arvinte Roxana¹³,Aziziyan Mohammad Reza¹²,Arès Richard¹³,Fafard Simon¹²,Boucherif Abderraouf¹³

Affiliation:

1. Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Université de Sherbrooke, 3000 boul. de l’Université, Sherbrooke, Québec J1K 0A5, Canada

2. Department of Electrical and Computer Engineering, Faculty of Engineering, Université de Sherbrooke, 2500 boul. de l’Université, Sherbrooke, Québec J1K 2R1, Canada

3. Department of Mechanical Engineering, Faculty of Engineering, Université de Sherbrooke, 2500 boul. de l’Université, Sherbrooke, Québec J1K 2R1, Canada

Funder

Fonds de Recherche du Québec - Nature et Technologies

Natural Sciences and Engineering Research Council of Canada

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5088962

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