Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19850266?crawler=true&mimetype=application/pdf
Reference10 articles.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Effects of Spacer Thickness and Temperature on the Transport Properties of Modulation-Doped In0.53Ga0.47As/In0.52Al0.48As Heterojunctions;physica status solidi (a);2000-12
2. Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1−xAs buffers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
3. Lattice relaxation in InxAl1−xAs/GaAs heterostructure grown on exact oriented and misoriented GaAs substrates;Applied Physics Letters;1995-06-26
4. Heterostructure Field-Effect Transistors;Physics of High-Speed Transistors;1993
5. Structural properties and transport characteristics of pseudomorphic GaxIn1−xAs/AlyIn1−yAs modulation‐doped heterostructures grown by molecular‐beam epitaxy;Journal of Applied Physics;1992-02-15
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