Structural properties and transport characteristics of pseudomorphic GaxIn1−xAs/AlyIn1−yAs modulation‐doped heterostructures grown by molecular‐beam epitaxy-Reference-Cited by-同舟云学术

Structural properties and transport characteristics of pseudomorphic GaxIn1−xAs/AlyIn1−yAs modulation‐doped heterostructures grown by molecular‐beam epitaxy

Published:1992-02-15 Issue:4 Volume:71 Page:1790-1797
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tournié E.,Tapfer L.,Bever T.,Ploog K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.351215

Reference48 articles.

1. Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

2. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

3. Self-aligned In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with graded interface on semi-insulating InP grown by molecular beam epitaxy

4. High performance Al0.48In0.52As/Ga0.47In0.53As HFETs

5. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling

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1. Structural characterization of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP heterostructures by transmission electron microscopy and high‐resolution x‐ray diffraction;Journal of Applied Physics;1995-08-15

2. Properties of graded Inx0;Semiconductor Science and Technology;1995-02-01

3. Device considerations and modeling for the design of an InP-based MODFET millimeter-wave resistive mixer with superior conversion efficiency;IEEE Transactions on Microwave Theory and Techniques;1995

4. Real-time scanning microprobe reflection high-energy electron diffraction observations of InGaAs surfaces during molecular-beam epitaxy on InP substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-07

5. Tunable generation of nanometer-scale corrugations on high-index III-V semiconductor surfaces;Physical Review B;1994-04-15