Structural characterization of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP heterostructures by transmission electron microscopy and high‐resolution x‐ray diffraction-Reference-Cited by-同舟云学术

Structural characterization of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP heterostructures by transmission electron microscopy and high‐resolution x‐ray diffraction

Published:1995-08-15 Issue:4 Volume:78 Page:2403-2410
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Carlino E.,Giannini C.,Tapfer L.,Catalano M.,Tournié E.,Zhang Y. H.,Ploog K. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.360162

Reference29 articles.

1. Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer

2. Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

3. High-temperature growth of Si-doped AlGaAs by molecular-beam epitaxy

4. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy

5. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures

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