InAsN∕GaAs(N) quantum-dot and InGaNAs∕GaAs quantum-well emitters: A comparison-Reference-Cited by-同舟云学术

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InAsN∕GaAs(N) quantum-dot and InGaNAs∕GaAs quantum-well emitters: A comparison

Published:2005-06-06 Issue:23 Volume:86 Page:233107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bais G.,Cristofoli A.,Jabeen F.,Piccin M.,Carlino E.,Rubini S.,Martelli F.,Franciosi A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1944899

Reference17 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

3. Development of InGaAsN-based 1.3 m VCSELs

4. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs

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3. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016

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