Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125917
Reference16 articles.
1. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. 1.3 μm room-temperature GaAs-based quantum-dot laser
4. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
5. Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
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