Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970935?crawler=true&mimetype=application/pdf
Reference3 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
3. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
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4. Low-Threshold 1.3-$\mu$m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures;IEEE Photonics Technology Letters;2008-06
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