Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots-Reference-Cited by-同舟云学术

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Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

Published:2011-10-25 Issue: Volume:50 Page:111001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yang Cheng-Hong,Hsieh Meng-Chien,Wu Chia-Wei,Chang Yen-Ting,Wu Yue-Han,Chang Li,Chen Jenn-Fang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)

3. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode

4. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

5. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy

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