The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs-Reference-Cited by-同舟云学术

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The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

Published:2016-05-12 Issue:6 Volume:31 Page:065021
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhai Zhangyin^ORCID,Yu Hualing,Zuo Fen,Guo Chunlian,Chen Guibin,Zhang Fengming,Wu Xiaoshan,Gao Ju

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=6/a=065021/pdf

Reference21 articles.

1. Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

2. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode

3. Plasmonic nanoparticle enhanced light absorption in GaAs solar cells

4. Extrinsic photoconductivity in high‐resistivity GaAs doped with oxygen

5. A study of deep impurity levels in GaAs due to Cr and O by ac photoconductivity

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