Schottky barrier height of n‐InxGa1−xAs diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654957
Reference6 articles.
1. Fermi Level Position at Metal-Semiconductor Interfaces
2. Conduction Band Minima ofGa(As1−xPx)
3. Electrical characteristics of GaAsP Schottky barrier diodes
4. Solid Solution in AIIIBVCompounds
5. Phase diagram, crystal growth, and band structure of InxGa1-xAs
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