Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors-Reference-Cited by-同舟云学术

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Published:2021-01-11 Issue:2 Volume:13 Page:2807-2819
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Swallow Jack E. N.¹²,Palgrave Robert G.³^ORCID,Murgatroyd Philip A. E.¹,Regoutz Anna³^ORCID,Lorenz Michael⁴^ORCID,Hassa Anna⁴,Grundmann Marius⁴^ORCID,von Wenckstern Holger⁴,Varley Joel B.⁵^ORCID,Veal Tim D.¹^ORCID

Affiliation:

1. Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 7ZF, U.K.

2. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.

3. Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.

4. Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany

5. Lawrence Livermore National Laboratory, Livermore, California 94550, United States

Funder

Engineering and Physical Sciences Research Council

Air Force Office of Scientific Research

Office of Energy Efficiency and Renewable Energy

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.0c16021

Reference73 articles.

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5. High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs

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