An investigation of the electrical and chemical properties of intimate metal‐InyAl1−yAs(100) interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356246
Reference31 articles.
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1. Low temperature work function variations of the Au/GaSb (110) interface: Experimental results and theoretical model;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-09
2. Formation of In– and Au–In0.52Al0.48As(100) interfaces: A soft x-ray photoemission spectroscopy study;Journal of Applied Physics;1998-10-15
3. Thermal stability of epitaxial aluminum on In0.53Al0.47As Schottky diodes grown by molecular beam epitaxy;Journal of Applied Physics;1998-05-15
4. Photoemission study of the formation of intimate In–InGaAs(100) contacts at room and cryogenic temperatures;Journal of Applied Physics;1997-06-15
5. Metal–In80Al20Sb interface formation: An x-ray photoelectron spectroscopy study;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11
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