Measurements of Al‐AlInAs Schottky barriers preparedinsituby molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106456
Reference7 articles.
1. DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFETs
2. GaInAs‐AlInAs structures grown by molecular beam epitaxy
3. Composition dependence of Au/InxAl1−xAs Schottky barrier heights
4. Schottky barrier height of InxAl1−xAs epitaxial and strained layers
5. High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As
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1. Controlling Fermi level pinning in near-surface InAs quantum wells;Applied Physics Letters;2022-08-29
2. Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP;Journal of Physics D: Applied Physics;2018-05-04
3. Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials;Japanese Journal of Applied Physics;1999-02-28
4. Thermal stability of epitaxial aluminum on In0.53Al0.47As Schottky diodes grown by molecular beam epitaxy;Journal of Applied Physics;1998-05-15
5. Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies;Journal of Applied Physics;1998-01
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