High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101261
Reference12 articles.
1. Characterization of In0.53Ga0.47As photodiodes exhibiting low dark current and low junction capacitance
2. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
3. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
4. Schottky barrier height of n‐InxGa1−xAs diodes
5. Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs
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