Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366692
Reference15 articles.
1. Self-limiting advancing gates for GaAs metal–semiconductor field effect transistors
2. High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies
3. PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition
4. 1.09‐eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited onn‐ andp+n‐Al0.48In0.52As layers
5. Study of Schottky contact formation on CH4/H2reactive-ion-etched InAlAs
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1. Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers;Journal of Optical Technology;2024-02-01
2. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts;Surfaces and Interfaces;2023-07
3. Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals;Materials Science in Semiconductor Processing;2015-02
4. Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization;Semiconductor Science and Technology;2014-01-31
5. Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures;Japanese Journal of Applied Physics;2011-06-20
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