Study of Schottky contact formation on CH4/H2reactive-ion-etched InAlAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=6/a=011/pdf
Reference19 articles.
1. InAlAs/InGaAs heterostructure FET's processed with selective reactive-ion-etching gate-recess technology
2. Reactive ion etching of InP, InGaAs, InAlAs: Comparison of C2H6/H2 with CCl2F2/O2
3. Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal stability of epitaxial aluminum on In0.53Al0.47As Schottky diodes grown by molecular beam epitaxy;Journal of Applied Physics;1998-05-15
2. Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies;Journal of Applied Physics;1998-01
3. Schottky contacts on reactive-ion etched InGaP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
4. Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidization;Journal of Electronic Materials;1996-05
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