Thermal stability of epitaxial aluminum on In0.53Al0.47As Schottky diodes grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367352
Reference17 articles.
1. Insitu, near‐ideal epitaxial Al/AlxGa1−xAs Schottky barriers formed by molecular beam epitaxy
2. Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular‐beam epitaxy
3. Comments on the conduction mechanism in Schottky diodes
4. An investigation of the electrical and chemical properties of intimate metal‐InyAl1−yAs(100) interfaces
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