The growth of epitaxial aluminium on As containing compound semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular‐beam epitaxy
2. Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
3. The interaction of silver and aluminium on gallium arsenide (001) surfaces: A study by mbe and associated techniques
4. Epitaxial A1 films on GaAs(100) surfaces
5. Epitaxial relationships between Al, Ag and GaAs{001} surfaces
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1. Observation of an abrupt 3D-2D morphological transition in thin Al layers grown by MBE on InGaAs surface;Journal of Vacuum Science & Technology A;2024-04-16
2. Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy;Physical Review Materials;2023-07-24
3. Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits;Journal of Applied Physics;2021-01-14
4. Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique;Journal of Applied Physics;2020-09-21
5. Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy;Nanoscale;2019
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