Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique-Reference-Cited by-同舟云学术

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Published:2020-09-21 Issue:11 Volume:128 Page:115301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

McFadden Anthony P.¹^ORCID,Goswami Aranya¹,Seas Michael²,McRae Corey Rae H.³⁴^ORCID,Zhao Ruichen³⁴^ORCID,Pappas David P.³⁴,Palmstrøm Christopher J.¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Physics Department, University of Colorado, Boulder, Colorado 80309, USA

4. National Institute of Standards and Technology, Boulder, Colorado 80305, USA

Funder

Army Research Office

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0023743

Reference49 articles.

1. A quantum engineer's guide to superconducting qubits

2. Quantum information processing with superconducting circuits: a review

3. Superconducting gatemon qubit based on a proximitized two-dimensional electron gas

4. Superconducting gatemon qubit based on a proximitized two-dimensional electron gas

5. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices

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