Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325286
Reference21 articles.
1. Covalent bonding of metal atoms at the Schottky‐barrier interface of GaAs, Ge, and Si
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4. Epitaxial Growth of Gallium Phosphide on Cleaved and Polished (111) Calcium Fluoride
5. GaAs IMPATT diodes prepared by molecular beam epitaxy
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