Insitu, near‐ideal epitaxial Al/AlxGa1−xAs Schottky barriers formed by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346528
Reference19 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. The Schottky‐barrier height of Au onn‐Ga1−xAlxAs as a function of AlAs content
3. Schottky barrier heights of molecular beam epitaxial metal‐AlGaAs structures
4. Barrier heights and electrical properties of intimate metal‐AlGaAs junctions
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