Author:
Wang Liang,Zhao Weifeng,Adesida Ilesanmi
Subject
Physics and Astronomy (miscellaneous)
Reference18 articles.
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2. Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP
3. Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As
4. 1.09‐eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited onn‐ andp+n‐Al0.48In0.52As layers
5. Measurements of thermally induced nanometer-scale diffusion depth of Pt∕Ti∕Pt∕Au gate metallization on InAlAs∕InGaAs high-electron-mobility transistors
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