Measurements of thermally induced nanometer-scale diffusion depth of Pt∕Ti∕Pt∕Au gate metallization on InAlAs∕InGaAs high-electron-mobility transistors-Reference-Cited by-同舟云学术

Measurements of thermally induced nanometer-scale diffusion depth of Pt∕Ti∕Pt∕Au gate metallization on InAlAs∕InGaAs high-electron-mobility transistors

Published:2005-12-05 Issue:23 Volume:87 Page:232102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Seiyon,Adesida Ilesanmi,Hwang Heedon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2137687

Reference13 articles.

1. Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's

2. Y. C. Chou, D. Leung, R. Lai, R. Grundbacher, P. H. Liu, M. Biedenbender, Q. Kan, D. Eng, M. Wojitowicz, and A. Oki,IEEE Technical Digest-GaAs IC Symposium (Gallium Arsenide Integrated Circuit), San Diego, CA, pp. 63–66.

3. Reliability of 70 nm metamorphic HEMTs

4. Effect of alloying behavior on the electrical characteristics of n‐GaAs Schottky diodes metallized with W, Au, and Pt

5. Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies

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