Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's-Reference-Cited by-同舟云学术

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Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's

Published:1986-03 Issue:3 Volume:7 Page:185-187
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Canali C.,Castaldo F.,Fantini F.,Ogliari D.,Umena L.,Zanoni E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31962/01486161.pdf?arnumber=1486161

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3. Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of fT Based on the Small Signal Equivalent Circuit;Journal of Nanoscience and Nanotechnology;2019-05-01

4. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al 2 O 3 surface passivation;Solid-State Electronics;2018-04

5. Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances;IEEE Journal of the Electron Devices Society;2018

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