Electrophysical Properties and Thermal Stability of Pt/InAlAs Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Electrophysical Properties and Thermal Stability of Pt/InAlAs Schottky Barrier Diodes

Published:2024-06-28 Issue: Volume:45 Page:210-213
ISSN:
Container-title:2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Paramonova Maria A.¹,Aksenov Maxim S.²,Genze Ilya Yu.²,Dmitriev Dmitriy V.²

Affiliation:

1. Novosibirsk State University,Rzhanov Institute of Semiconductor Physics Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor Physics Novosibirsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10614947/10614948/10615006.pdf?arnumber=10615006

Reference16 articles.

1. A review of InP/InAlAs/InGaAs based transistors for high frequency applications

2. High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

3. Influence of Ti and Cr Adhesion Layers on Ultrathin Au Films

4. 1.09‐eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited onn‐ andp+n‐Al0.48In0.52As layers

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