Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/29/i=3/a=035009/pdf
Reference17 articles.
1. Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs fabricated by selective wet etching
2. High-performance 0.1-μm gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology
3. InP-based enhancement-mode pseudomorphic HEMT with strained In/sub 0.45/Al/sub 0.55/As barrier and In/sub 0.75/Ga/sub 0.25/As channel layers
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1. The study of gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor;MATER RES PROC;2016
2. An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches;Solid-State Electronics;2015-03
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