Composition dependence of Au/InxAl1−xAs Schottky barrier heights
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97290
Reference15 articles.
1. GaInAs‐AlInAs structures grown by molecular beam epitaxy
2. Summary Abstract: Internal photoemission studies of (GaIn)As, (AlIn)As Schottky diodes and (GaIn)As/(AlIn)As heterojunction grown by molecular beam epitaxy
3. Ga0.47In0.53As JFETs and MESFETs with OM-VPE-grown GaAs surface layers
4. Ga0.47In0.53As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gate
5. GaAs/Ga0.47In0.53As lattice‐mismatched Schottky barrier gates: Influence of misfit dislocations on reverse leakage currents
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