Photoemission study of the formation of intimate In–InGaAs(100) contacts at room and cryogenic temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365377
Reference9 articles.
1. Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm
2. MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices
3. Improvements to the Schottky barrier heights of intimate metal-InGaAs contacts by low temperature metallisation
4. The formation of interfaces on GaAs and related semiconductors: A reassessment
5. Formation of interfaces between In and Au and GaAs(100) studied with soft-x-ray photoemission spectroscopy
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of In– and Au–In0.52Al0.48As(100) interfaces: A soft x-ray photoemission spectroscopy study;Journal of Applied Physics;1998-10-15
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