Effects of the oxygen fraction and substrate bias power on the electrical and optical properties of silicon oxide films by plasma enhanced chemical vapour deposition using TMOS/O2gas-Reference-Cited by-同舟云学术

Effects of the oxygen fraction and substrate bias power on the electrical and optical properties of silicon oxide films by plasma enhanced chemical vapour deposition using TMOS/O2gas

Published:2004-05-27 Issue:12 Volume:37 Page:1679-1684
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Bang S B,Chung T H,Kim Y,Kang M S,Kim J K

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/37/i=12/a=012/pdf

Reference26 articles.

1. Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy

2. Spectroscopic studies on preparation of silicon oxide films by PECVD using organosilicon compounds

3. A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor

4. Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane

5. SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

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