Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

Author:

Beladiya Vivek1234ORCID,Becker Martin5264,Faraz Tahsin78910ORCID,Kessels W. M. M. (Erwin)78910ORCID,Schenk Paul123411,Otto Felix12264ORCID,Fritz Torsten12264ORCID,Gruenewald Marco12264ORCID,Helbing Christian135264,Jandt Klaus D.135264ORCID,Tünnermann Andreas123411,Sierka Marek5264ORCID,Szeghalmi Adriana123411ORCID

Affiliation:

1. Institute of Applied Physics

2. Friedrich Schiller University Jena

3. 07745 Jena

4. Germany

5. Otto Schott Institute of Materials Research

6. 07743 Jena

7. Department of Applied Physics

8. University of Technology Eindhoven

9. Eindhoven

10. The Netherlands

11. Fraunhofer Institute for Applied Optics and Precision Engineering IOF

12. Institute of Solid State Physics

13. Chair of Materials Science (CMS)

Abstract

PEALD of thin SiO2 films assisted by bias is a powerful technique to tailor their physical and chemical properties.

Funder

Deutsche Forschungsgemeinschaft

Fraunhofer-Gesellschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Reference94 articles.

1. S. Eränen , in Handbook of Silicon Based MEMS Materials and Technologies , ed. V. Lindroos , M. Tilli , A. Lehto and T. Motooka , William Andrew Publishing , Boston , 2010 , ch. 8, pp. 137–148

2. J. Foggiato , in Handbook of Thin Film Deposition Processes and Techniques , ed. K. Seshan , William Andrew Publishing , Norwich, NY , 2nd edn, 2001 , ch. 3, pp. 111–150

3. Plasma deposition of optical films and coatings: A review

4. N. Kaiser and H. K.Pulker , Optical interference coatings , 2003

5. Antireflection coating design for plastic optics

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