Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor-Reference-Cited by-同舟云学术

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Published:2016-02-22 Issue:11 Volume:51 Page:5082-5091
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Jung Hanearl,Kim Woo-Hee,Oh Il-Kwon,Lee Chang-Wan,Lansalot-Matras Clement,Lee Su Jeong,Myoung Jae-Min,Lee Han-Bo-Ram,Kim Hyungjun

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-016-9811-0.pdf

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