SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization-Reference-Cited by-同舟云学术

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SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Published:2001-09 Issue:5 Volume:19 Page:2670-2675
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Croci S.,Pêcheur A.,Autran J. L.,Vedda A.,Caccavale F.,Martini M.,Spinolo G.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1399317

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure;IEEE Transactions on Electron Devices;2022-08

2. Optimization of Preparation Conditions to Control Structural Characteristics of Silicon Dioxide Nanostructures Prepared by Magnetron Plasma Sputtering;Silicon;2017-11-04

3. Study of the Stability and Hydrophilicity of Plasma-Modified Microfluidic Materials;Plasma Processes and Polymers;2016-10-04

4. Analysis of p-type SiOxlayers as a boron diffusion source for n-type c-Si substrates;physica status solidi (a);2016-03-16

5. Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor;Journal of Materials Science;2016-02-22

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