Analysis of p-type SiOxlayers as a boron diffusion source for n-type c-Si substrates-Reference-Cited by-同舟云学术

Analysis of p-type SiOxlayers as a boron diffusion source for n-type c-Si substrates

Published:2016-03-16 Issue:7 Volume:213 Page:1760-1766
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Goyal Prabal¹²,Urrejola Elias¹,Hong Junegie¹,Voillot Julien¹,i Cabarrocas Pere Roca²,Johnson Erik²

Affiliation:

1. Air Liquide; Centre de Recherche Paris Saclay; 78354 Jouy-en-Josas France

2. LPICM, CNRS, Ecole Polytechnique; Université Paris-Saclay; 91128 Palaiseau France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Ion implantation in semiconductors—Part II: Damage production and annealing

2. Dopant segregation in polycrystalline silicon

3. Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

4. Epitaxially grown emitters for thin film crystalline silicon solar cells

5. First-principles study ofn- andp-doped silicon nanoclusters

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