Spectroscopic studies on preparation of silicon oxide films by PECVD using organosilicon compounds-Reference-Cited by-同舟云学术

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Spectroscopic studies on preparation of silicon oxide films by PECVD using organosilicon compounds

Published:1996-05-01 Issue:2 Volume:5 Page:339-343
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Inoue Y,Takai O

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference15 articles.

1. Silicon oxide deposition from tetraethoxysilane in a radio frequency downstream reactor: Mechanisms and step coverage

2. Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

3. Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

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