Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate-Reference-Cited by-同舟云学术

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Published:2014-01 Issue:1 Volume:23 Page:018501
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Li Cong,Zhuang Yi-Qi,Zhang Li,Jin Gang

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/23/1/018501/pdf

Reference17 articles.

1. Analytic Charge Model for Surrounding-Gate MOSFETs

2. Performance and analytical modelling of halo-doped surrounding gate MOSFETs

3. Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

4. High-Temperature Performance of Silicon Junctionless MOSFETs

5. A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

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