2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET-Reference-Cited by-同舟云学术

2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET

Published:2020-03 Issue: Volume:116 Page:153071
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Baral Kamalaksha,Singh Prince Kumar,Kumar Sanjay,Singh Ashish,Tripathy Manas,Chander Sweta,Jit Satyabrata

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference36 articles.

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5. Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure;Jin;J Phys D: Appl Phys,2012

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