Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00653-5.pdf
Reference24 articles.
1. Jazaeri F, Barbut L, Koukab A, Sallese J-M (2013) Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime. Solid State Electron 82:103–110
2. Colinge JP, Lee CW, Afzalian A, Dehdashti N, Yan R, Ferain I, Razavi P, O’Neil B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R (2009) SOI gated resistor: CMOS without junctions” In Proceedings of IEEE International SOI Conference, pp. 1–2
3. Singh J, Gadi V, Kumar MJ (2016) Modeling a Dual-Material-Gate Junctionless FET Under Full and Partial Depletion Conditions Using Finite-Differentiation Method. IEEE Transact Electron Dev 63(6):2282–2287
4. Wang P, Zhuang Y, Li C, Li Y, Jiang Z (2014) Subthreshold behavior models for nanoscale junctionless double-gate MOSFETs with dual material gate stack, J Appl Phys 53(8)
5. Chiang T-K (2012) A new quasi 2-D threshold voltage model for short-channel Junctionless cylindrical surrounding gate (JLCSG) MOSFETs. IEEE Transact Electron Dev 59(11):3127–3129
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