An extensive analysis of source engineered tunnel FET for low power biosensing application
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s00542-024-05760-6.pdf
Reference31 articles.
1. Abdi DB, Kumar MJ (2014) Controlling ambipolar current in tunneling FETs using overlapping gate-on-drain. IEEE J Electron Devices 2:187–190. https://doi.org/10.1109/JEDS.2014.2327626
2. Abdulnassir R, Singh A, Tekilu D et al (2024) Assessment of hetero-structure junction-less tunnel FET’s efficacy for biosensing applications. Sens Imaging 25. https://doi.org/10.1007/s11220-023-00455-0
3. Boucart K, Ionescu AM (2006) Double gate tunnel FET with ultrathin silicon body and high-k gate dielectric. European Solid-State Device Research Conference, Montreux, Switzerland, pp. 383–386. https://doi.org/10.1109/ESSDER.2006.307718
4. Chakraborti P, Biswas A, Mallik A (2022) High sensitivity Ge-source L-shaped tunnel BioFETs for detection of high-K biomolecules. Microsyst Technol 28:2131–2138. https://doi.org/10.1007/s00542-022-05358-w
5. Chakraborti P, Biswas A, Mallik A (2024) Design and analysis of Si-Ge heterostructure tunnel FET biosensors for detection of a wide range of biomolecules in both wet and dry environments. Microsyst Technol 8. https://doi.org/10.1007/s00542-024-05726-8
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